2N3019, SI-N, 80V, 1A, TO5

2N3019 Tranzistor:bipolar,NPN; 80V; 1A; 800mW; TO5 RoHS

Silicon NPN transistor in a TO-39 type case designed

primarily for amplifier and switching applications. This device features high

breakdown voltage low leakage current, low capacity, and beta useful over an

extremely wide current range.

Absolute Maximum Ratings:

Collector-Base Voltage, Vcbo : 140V

Collector-Emitter Voltage, Vceo : 80V

Emitter-Base Voltage, Vebo : 7V

Continuous Collector Current, I c : 1A

Total Device Dissipation (Ta = +25ºC), PD : 800mW

Derate above 25ºC : 4.6mW/ºC

Total Device Dissipation (Tc = + 25ºC), PD : 5W

Derate above 25ºC : 28.6mW/ºC

Operating Junction Temperature Range, T j : -65ºC to +200ºC

Storage Temperature Range, Tstg : -65ºC to 200ºC

Thermal Resistance, Junction -to-Case, R thJC : 16.5ºC/W

Thermal Resistance, Junction-to-Ambient, RthJA : 89.5ºC/W

Lead Temperature (During Soldering, 1/16′′ from case, 60sec max), T : 300ºC

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

2N3019, SI-N, 80V, 1A, TO5