BFG35, RF Transistor, NPN, 4 GHz, 1 W, 150 mA, SOT-223

Transistor Type NPN

Voltage - Collector Emitter Breakdown (Max) 15V

Frequency - Transition6GHz

Noise Figure (dB Typ @ f)1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Gain9dB ~ 14dB

Power - Max 1W

DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 8V

Current - Collector (Ic) (Max) 150mA

Operating Temperature-

Mounting Type Surface Mount

Package / CaseTO-261-4, TO-261AA

Supplier Device PackagePG-SOT223-4

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BFG35, RF Transistor, NPN, 4 GHz, 1 W, 150 mA, SOT-223