BFU520XAR, RF Transistor, NPN, 12 V, 10.5 GHz, 450 mW, NXP

Manufacturer: NXP

Product Category: RF Bipolar Transistors

RoHS: Details

Transistor Type: Bipolar Wideband

Technology: Si

Transistor Polarity: NPN

Operating Frequency: 10.5 GHzMHz

DC Collector/Base Gain hFE Min: 60

Collector- Emitter Voltage VCEO Max: 16 V

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 5 mA

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Configuration: Single

Mounting Style: SMD/SMT

Package/Case: SOT143B-4

Packaging: Cut Tape

Packaging: Reel

Collector- Base Voltage VCBO: 24 V

DC Current Gain hFE Max: 200

Operating Temperature Range: - 40 C to + 150 C

Type: Wideband RF Transistor

Brand: NXP Semiconductors

Gain Bandwidth Product fT: 10.5 GHz

Maximum DC Collector Current: 50 mA

Pd - Power Dissipation: 450 mW

Product Type: RF Bipolar Transistors

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BFU520XAR, RF Transistor, NPN, 12 V, 10.5 GHz, 450 mW, NXP