BST62, SI-P, 80V, 1A, SOT89, NXP

NXP BST62,115 Bipolar (BJT) Single Transistor, Darlington, PNP, -80 V, 200 MHz, 1.3 W, -1 A, 2000 hFE

Transistor Polarity: PNP

Collector Emitter Voltage V(br)ceo: -80V

Transition Frequency ft: 200MHz

Power Dissipation Pd: 1.3W

DC Collector Current: -1A

DC Current Gain hFE: 2000hFE

Transistor Case Style: SOT-89

No. of Pins: 3Pins

Operating Temperature Max: 150°C

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BST62, SI-P, 80V, 1A, SOT89, NXP