FDP80N06, N-MOSFET, 60V, 80A, 175W, TO220, ON SEMICONDUCTOR

Manufacturer: Fairchild Semiconductor

RoHS: RoHS Compliant Details

Transistor Polarity: N-Channel

Drain-Source Breakdown Voltage: 60 V

Gate-Source Breakdown Voltage: +/- 20 V

Continuous Drain Current: 80 A

Rds On: 10 mOhms

Configuration: Single

Maximum Operating Temperature: + 175 C

Mounting Style: Through Hole

Package / Case: TO-220-3

Packaging: Tube

Fall Time: 113 ns

Minimum Operating Temperature: - 55 C

Power Dissipation: 176 W

Rise Time: 259 ns

Series: FDP80N06

Typical Turn-Off Delay Time: 136 ns

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FDP80N06, N-MOSFET, 60V, 80A, 175W, TO220, ON SEMICONDUCTOR