FDS6676AS, N-MOSFET, 30V, 14.5A

RoHS: RoHS Compliant Details

Transistor Polarity: N-Channel

Drain-Source Breakdown Voltage: 30 V

Gate-Source Breakdown Voltage: +/- 20 V

Continuous Drain Current: 14.5 A

Rds On: 7 mOhms

Configuration: Single Quad Drain Triple Source

Maximum Operating Temperature: + 150 C

Mounting Style: SMD/SMT

Package / Case: SOIC-8 Narrow

Packaging: Reel

Fall Time: 29 ns

Forward Transconductance - Min: 66 S

Minimum Operating Temperature: - 55 C

Power Dissipation: 2.5 W

Rise Time: 12 ns

Series: FDS6676

Typical Turn-Off Delay Time: 43 ns

Part # Aliases: FDS6676AS_NL

Unit Weight: 187 mg

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FDS6676AS, N-MOSFET, 30V, 14.5A