FGA30T65SHD, IGBT, 60A, HIGH SPEED, 650V, 238W, STMicroelectronics

Manufacturer:ON Semiconductor

Product Category:IGBT Transistors

RoHS: Details

Technology:Si

Package/Case:TO-3PN

Mounting Style:Through Hole

Collector- Emitter Voltage VCEO Max:650 V

Collector-Emitter Saturation Voltage:2.14 V

Maximum Gate Emitter Voltage:30 V

Continuous Collector Current at 25 C:60 A

Pd - Power Dissipation:238 W

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 175 C

Series:FGA30T65SHD

Packaging:Tube

Continuous Collector Current Ic Max:60 A

Brand:ON Semiconductor / Fairchild

Gate-Emitter Leakage Current:400 nA

Product Type:IGBT Transistors

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FGA30T65SHD, IGBT, 60A, HIGH SPEED, 650V, 238W, STMicroelectronics