FQD2N80TM, N-MOSFET, 800V, 1.8A, DPAK, ONSEMI

Transistor Polarity: N-Channel

Drain-Source Breakdown Voltage: 800 V

Gate-Source Breakdown Voltage: +/- 30 V

Continuous Drain Current: 1.8 A

Drain-Source On Resistance: 6.3 Ohms

Configuration: Single

Maximum Operating Temperature: + 150 C

Mounting Style: SMD/SMT

Package / Case: TO-252

Packaging: Reel

Fall Time: 28 ns

Forward Transconductance - Min: 2.4 S

Minimum Operating Temperature: - 55 C

Power Dissipation: 2.5 W

Rise Time: 30 ns

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FQD2N80TM, N-MOSFET, 800V, 1.8A, DPAK, ONSEMI