SIHP12N60E, N-MOSFET, 600V, 12A, 147W, VISHAY SILICONIX

VISHAY SILICONIX - SIHP12N60E-GE3 - MOSFET, N-CH, 600V, 12A, TO220AB

MOSFET, N-CH, 600V, 12A, TO220AB

Transistor Polarity: N Channel

Continuous Drain Current Id: 12A

Drain Source Voltage Vds: 600V

On Resistance Rds(on): 0.32ohm

Rds(on) Test Voltage Vgs: 10V

Threshold Voltage Vgs: 2V

Power Dissipation Pd: 147W

Transistor Case Style: TO-220AB

No. of Pins: 3

Operating Temperature Max: 150°C

MSL: -

Operating Temperature Min: -55°C

Operating Temperature Range: -55°C to +150°C

Voltage Vgs Max: 30V

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

SIHP12N60E, N-MOSFET, 600V, 12A, 147W, VISHAY SILICONIX