IXFH120N15P, N-MOSFET, 120A, 150V, 600W, IXYS

Furnizor:  IXYS SEMICONDUCTOR

IXFH120N15P

RoHS :  Da
Descriere
MOSFET, N, TO-247
Transistor Polarity:N
Current Id Max:120A
Drain Source Voltage Vds:150V
On Resistance Rds(on):0.016ohm
Rds(on) Test Voltage Vgs:10V
Voltage Vgs Max:20V
Power Dissipation:600W
Operating Temperature Range:-55C to +175C
Transistor Case Style:TO-247
No. of Pins:3
Continuous Drain Current, Id:120A
Junction to Case Thermal Resistance A:0.25C/W
N-channel Gate Charge:150nC
Package / Case:TO-247
Power Dissipation Pd:600W
Termination Type:Through Hole
Threshold Voltage Vgs Typ:5V
Transistor Type:MOSFET
Typ Capacitance Ciss:4900pF
Typ Voltage Vds:150V
Voltage Vgs Rds on Measurement:10V
Reverse Recovery Time trr Max:200ns