STGWT40H65DFB, IGBT, high speed, 40A, 600V, 283W, STMicroelectronics

Manufacturer: STMicroelectronics

Description: IGBT Transistors 650V 40A High Speed Trench Gate IGBT

Configuration: Single

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.35 V

Maximum Gate Emitter Voltage: 20 V

Continuous Collector Current at 25 C: 80 A

Gate-Emitter Leakage Current: 250 nA

Power Dissipation: 283 W

Maximum Operating Temperature: + 175 C

Package / Case: TO-3P

Packaging: Tube

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

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STGWT40H65DFB, IGBT, high speed, 40A, 600V, 283W, STMicroelectronics