IGW25N120H3, IGBT, FAST, 1200V, 50A, 326W, INFINEON

Manufacturer: Infineon

Product Category: IGBT Transistors

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.7 V

Maximum Gate Emitter Voltage: +/- 20 V

Continuous Collector Current at 25 C: 50 A

Gate-Emitter Leakage Current: 600 nA

Power Dissipation: 326 W

Maximum Operating Temperature: + 150 C

Package / Case: TO-247-3

Packaging: Tube

Minimum Operating Temperature: - 40 C

Mounting Style: Through Hole

MARKED : G25H1203

Utilizare: invertor solar, aparate sudura, sursa PFC, TELECOM

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IGW25N120H3, IGBT, FAST, 1200V, 50A, 326W, INFINEON