IKW50N65EH5, IGBT ultrafast, 80A, 650V, 275W, TO247-3, INFINEON

Manufacturer: Infineon

Product Category: IGBT Transistors

RoHS: Details

Technology: Si

Package/Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.65 V

Maximum Gate Emitter Voltage: 20 V

Continuous Collector Current at 25 C: 80 A

Pd - Power Dissipation: 275 W

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 175 C

Series: Trenchstop IGBT5

Packaging: Tube

Brand: Infineon Technologies

Gate-Emitter Leakage Current: 100 nA

Height: 20.7 mm

Length: 15.87 mm

Product Type: IGBT Transistors

Subcategory: IGBTs

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

IKW50N65EH5, IGBT ultrafast, 80A, 650V, 275W, TO247-3, INFINEON