IRFB18N50K, N-MOSFET, 500V, 17A, 235W, TO220, VISHAY

Manufacturer: Vishay

Product Category: MOSFET

RoHS: RoHS Compliant By Exemption Details

Brand: Vishay / Siliconix

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs - Gate-Source Breakdown Voltage: 30 V

Id - Continuous Drain Current: 17 A

Rds On - Drain-Source Resistance: 290 mOhms

Configuration: Single

Vgs th - Gate-Source Threshold Voltage: 3 V to 5 V

Qg - Gate Charge: 120 nC

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 220 W

Mounting Style: Through Hole

Package / Case: TO-220-3

Packaging: Tube

Channel Mode: Enhancement

Fall Time: 30 ns

Forward Transconductance - Min: 6.4 S

Minimum Operating Temperature: - 55 C

Rise Time: 60 ns

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

IRFB18N50K, N-MOSFET, 500V, 17A, 235W, TO220, VISHAY