IRFB4137, N-MOSFET, 300V, 38A, 341W, INFINEON

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 300 V

Id - Continuous Drain Current: 38 A

Rds On - Drain-Source Resistance: 56 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 5 V

Qg - Gate Charge: 125 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 341 W

Channel Mode: Enhancement

Packaging: Tube

Brand: Infineon / IR

Configuration: Single

Fall Time: 20 ns

Forward Transconductance - Min: 45 S

Height: 15.65 mm

Length: 10 mm

Product Type: MOSFET

Rise Time: 23 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 34 ns

Typical Turn-On Delay Time: 18 ns

Width: 4.4 mm

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IRFB4137, N-MOSFET, 300V, 38A, 341W, INFINEON