IRFBG30, N-MOSFET, 1000V, 3.1A, TO220, INFINEON

IRFBG30PBF / Transistor N-MOSFET 1000V 3,1A 125W TO220AB

Channel Type: N Channel

Transistor Polarity: N Channel

Drain Source Voltage Vds: 1kV

Continuous Drain Current Id: 3.1A

Drain Source On State Resistance: 5ohm

On Resistance Rds(on): 5ohm

Transistor Case Style: TO-220AB

Transistor Mounting: Through Hole

Rds(on) Test Voltage: 10V

Gate Source Threshold Voltage Max: 4V

Power Dissipation Pd: 125W

Power Dissipation: 125W

No. of Pins: 3Pins

Operating Temperature Max: 150°C

Qualification: -

Product Range: IRFBG30 Series

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IRFBG30, N-MOSFET, 1000V, 3.1A, TO220, INFINEON