IRFUC20, N-MOSFET, 600V, 2A, IPAK, VISHAY

Manufacturer: Vishay

Product Category: MOSFET

RoHS: RoHS Compliant By Exemption Details

Brand: Vishay Semiconductors

Id - Continuous Drain Current: 2 A

Vds - Drain-Source Breakdown Voltage: 600 V

Rds On - Drain-Source Resistance: 4.4 Ohms

Transistor Polarity: N-Channel

Vgs - Gate-Source Breakdown Voltage: 20 V

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 2.5 W

Mounting Style: Through Hole

Package / Case: IPAK-3

Packaging: Tube

Channel Mode: Enhancement

Configuration: Single

Fall Time: 25 ns

Minimum Operating Temperature: - 55 C

Rise Time: 23 ns

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IRFUC20, N-MOSFET, 600V, 2A, IPAK, VISHAY