IXFH26N50P3, N-MOSFET, 500V, 26A, 400W, IXYS

Manufacturer: IXYS

Product Category: MOSFET

RoHS: RoHS Compliant Details

Id - Continuous Drain Current: 26 A

Vds - Drain-Source Breakdown Voltage: 500 V

Rds On - Drain-Source Resistance: 240 mOhms

Transistor Polarity: N-Channel

Vgs - Gate-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 5 V

Qg - Gate Charge: 42 nC

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 400 W

Mounting Style: Through Hole

Package / Case: TO-247-3

Packaging: Tube

Brand: IXYS

Channel Mode: Enhancement

Fall Time: 5 ns

Forward Transconductance - Min: 14 S

Minimum Operating Temperature: - 55 C

Rise Time: 7 ns

Series: IXFH26N50

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IXFH26N50P3, N-MOSFET, 500V, 26A, 400W, IXYS