IXFH320N10T2, N-MOSFET; 100V; 320A. 1000W

Manufacturer: IXYS

RoHS: RoHS Compliant Details

Transistor Polarity: N-Channel

Drain-Source Breakdown Voltage: 100 V

Gate-Source Breakdown Voltage: 20 V

Continuous Drain Current: 320 A

Rds On: 3.5 mOhms

Configuration: Single

Maximum Operating Temperature: + 175 C

Mounting Style: Through Hole

Package / Case: TO-247

Packaging: Tube

Fall Time: 177 ns

Forward Transconductance - Min: 130 S

Gate Charge Qg: 430 nC

Minimum Operating Temperature: - 55 C

Power Dissipation: 1000 W

Rise Time: 46 ns

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IXFH320N10T2, N-MOSFET; 100V; 320A. 1000W