IXFH60N65X2-4, N-MOSFET, 600V, 60A, 780W, IXYS

SPECIFICATION

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Manufacturer IXYS

Type of transistor N-MOSFET

Technology HiPerFET™, X2-Class

Polarisation unipolar

Drain-source voltage 650V

Drain current 60A

Power dissipation 780W

Case TO247-4

Gate-source voltage ±30V

On-state resistance 52mΩ

Mounting THT

Gate charge 108nC

Kind of package tube

Kind of channel enhanced

Reverse recovery time 180ns

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IXFH60N65X2-4, N-MOSFET, 600V, 60A, 780W, IXYS