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Pagina de start > Componente electronice active > Tranzistoare > Tranzistoare N-MOSFET > IXFP10N60P, N-MOSFET, 600V, 10A, TO220, 200W

IXFP10N60P, N-MOSFET, 600V, 10A, TO220, 200W

Denumire Produs: 200W

COD: 49081

Preț orientativ: 28,63 RON

IXYS SEMICONDUCTOR - IXFP10N60P - MOSFET, N, TO-220  


  •   MOSFET, N, TO-220
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 10A
  • Drain Source Voltage Vds: 600V
  • On Resistance Rds(on): 740mohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs Typ: 5.5V
  • Power Dissipation Pd: 200W
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-220
  • No. of Pins: 3
  • Capacitance Ciss Typ: 1610pF
  • Current Id Max: 10A
  • Junction to Case Thermal Resistance A: 0.62°C/W
  • N-channel Gate Charge: 32nC
  • Package / Case: TO-220
  • Power Dissipation Pd: 200W
  • Power Dissipation Pd: 200W
  • Reverse Recovery Time trr Max: 200ns
  • Termination Type: Through Hole
  • Voltage Vds Typ: 600V
  • Voltage Vgs Max: 30V
  • Voltage Vgs Rds on Measurement: 10V

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