IXTK200N10P, N-MOSFET; 100V; 200A, TO247, IXYS

Furnizor:IXYS SEMICONDUCTOR

MOSFET, N, TO-264

Transistor Polarity: N Channel

Continuous Drain Current Id: 200A

Drain Source Voltage Vds: 100V

On Resistance Rds(on): 7.5mohm

Rds(on) Test Voltage Vgs: 15V

Threshold Voltage Vgs Typ: 5V

Power Dissipation Pd: 800W

Operating Temperature Range: -55°C to +175°C

Transistor Case Style: TO-264

No. of Pins: 3

Capacitance Ciss Typ: 7600pF

Current Id Max: 200A

Junction to Case Thermal Resistance A: 0.18°C/W

N-channel Gate Charge: 240nC

Package / Case: TO-264

Reverse Recovery Time trr Max: 100ns

Termination Type: Through Hole

Voltage Vds Typ: 100V

Voltage Vgs Max: 20V

Voltage Vgs Rds on Measurement: 10V

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IXTK200N10P, N-MOSFET; 100V; 200A, TO247, IXYS