IXTQ200N10T, N-MOSFET, 100V, 200A, 550W, IXYS

Manufacturer: IXYS

RoHS: RoHS Compliant Details

Transistor Polarity: N-Channel

Drain-Source Breakdown Voltage: 100 V

Continuous Drain Current: 200 A

Drain-Source On Resistance: 5.5 mOhms

Configuration: Single

Maximum Operating Temperature: + 175 C

Mounting Style: Through Hole

Package / Case: TO-3P

Packaging: Tube

Fall Time: 34 ns

Minimum Operating Temperature: - 55 C

Power Dissipation: 550 W

Rise Time: 31 ns

Typical Turn-Off Delay Time: 45 ns

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IXTQ200N10T, N-MOSFET, 100V, 200A, 550W, IXYS