MJE5731AG, SI-P, 375V, 1A, TO220

Product Category: Bipolar Transistors - BJT

Manufacturer: ON Semiconductor

RoHS: RoHS Compliant Details

Mounting Style: Through Hole

Package/Case: TO-220-3

Transistor Polarity: PNP

Configuration: Single

Collector- Emitter Voltage VCEO Max: 375 V

Collector- Base Voltage VCBO: 350 V

Emitter- Base Voltage VEBO: 5 V

Maximum DC Collector Current: 1 A

Gain Bandwidth Product fT: 10 MHz

Maximum Operating Temperature: + 150 C

Series: MJE5731A

Brand: ON Semiconductor

DC Collector/Base Gain hFE Min: 30

Height: 15.75 mm

Length: 10.53 mm

Minimum Operating Temperature: - 65 C

Packaging: Tube

Pd - Power Dissipation: 40000 mW

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MJE5731AG, SI-P, 375V, 1A, TO220