SIHD12N50E, N-MOSFET, 500V, 10.5A, DPAK, VISHAY

SIHD12N50E, N-MOSFET, 500V, 10.5A, VISHAY

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package/Case: TO-252-3

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 500 V

Id - Continuous Drain Current: 10.5 A

Rds On - Drain-Source Resistance: 380 mOhms

Vgs th - Gate-Source Threshold Voltage: 4 V

Vgs - Gate-Source Voltage: 30 V

Qg - Gate Charge: 25 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Configuration: Single

Pd - Power Dissipation: 114 W

Channel Mode: Enhancement

Packaging: Bulk

Series: E

Brand: Vishay / Siliconix

Fall Time: 12 ns

Rise Time: 16 ns

Typical Turn-Off Delay Time: 29 ns

Typical Turn-On Delay Time: 13 ns

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SIHD12N50E, N-MOSFET, 500V, 10.5A, DPAK, VISHAY