NGTB25N120FL3WG, IGBT, 1200V, 100A, 349W, TO247

Manufacturer: ON Semiconductor

Product Category: IGBT Transistors

RoHS: Details

Technology: Si

Package/Case: TO247-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Maximum Gate Emitter Voltage: +/- 20 V

Continuous Collector Current at 25 C: 100 A

Pd - Power Dissipation: 349 W

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Packaging: Tube

Brand: ON Semiconductor

Gate-Emitter Leakage Current: 200 nA

Product Type: IGBT Transistors

Subcategory: IGBTs

Unit Weight: 4,083 g

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NGTB25N120FL3WG, IGBT, 1200V, 100A, 349W, TO247