SI1029X-T1, Dual MOSFET, Complementary N and P Channel, 60 V, 305 mA, 305 mA, SC89

Channel Type:

Complementary N and P Channel

Transistor Polarity:

Complementary N and P Channel

Continuous Drain Current Id:

305mA

Drain Source Voltage Vds N Channel: 60V

Drain Source Voltage Vds P Channel: 60V

Drain Source Voltage Vds: 60V

Continuous Drain Current Id N Channel: 305mA

On Resistance Rds(on): 1.4ohm

Continuous Drain Current Id P Channel: 305mA

Rds(on) Test Voltage: 10V

Drain Source On State Resistance N Channel: 1.4ohm

Transistor Mounting: Surface Mount

Gate Source Threshold Voltage Max: 2.5V

Power Dissipation Pd: 250mW

Drain Source On State Resistance P Channel: 1.4ohm

Transistor Case Style: SC-89

No. of Pins: 6Pins

Operating Temperature Max: 150°C

Power Dissipation N Channel: 250mW

Power Dissipation P Channel: 250mW

Qualification: -

Product Range: -

MSL: MSL 1 - Unlimited

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

SI1029X-T1, Dual MOSFET, Complementary N and P Channel, 60 V, 305 mA, 305 mA, SC89