SIHA21N80AE, N-MOSFET, 600V, 7.5A, TO220F, VISHAY

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

REACH - SVHC:

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 800 V

Id - Continuous Drain Current: 7.5 A

Rds On - Drain-Source Resistance: 205 mOhms

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage: 4 V

Qg - Gate Charge: 48 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 155 C

Pd - Power Dissipation: 33 W

Channel Mode: Enhancement

Packaging: Tube

Brand: Vishay / Siliconix

Configuration: Single

Fall Time: 76 ns

Forward Transconductance - Min: 4 S

Product Type: MOSFET

Rise Time: 38 ns

Subcategory: MOSFETs

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

SIHA21N80AE, N-MOSFET, 600V, 7.5A, TO220F, VISHAY