SIHB125N60EF, N-MOSFET, 600V, 25A, 179W, D2PAK, VISHAY

Channel Type: N Channel

Transistor Polarity: N Channel

Drain Source Voltage Vds: 600V

Continuous Drain Current Id: 25A

Drain Source On State Resistance: 0.109ohm

On Resistance Rds(on): 0.109ohm

Transistor Case Style: TO-263 (D2PAK)

Transistor Mounting: Surface Mount

Rds(on) Test Voltage: 10V

Gate Source Threshold Voltage Max: 5V

Power Dissipation Pd: 179W

Power Dissipation: 179W

No. of Pins: 3Pins

Operating Temperature Max: 150°C

Qualification: -

Product Range: EF

Automotive Qualification Standard: -

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SIHB125N60EF, N-MOSFET, 600V, 25A, 179W, D2PAK, VISHAY