STGW80H65DF, IGBT, 120A, 650V, STMicroelectronics

Product Category: IGBT Transistors

Manufacturer: STMicroelectronics

RoHS: RoHS Compliant Details

Package/Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.6 V

Maximum Gate Emitter Voltage: 20 V

Continuous Collector Current at 25 C: 120 A

Pd - Power Dissipation: 469 W

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Series: 600-650V IGBTs

Packaging: Tube

Brand: STMicroelectronics

Continuous Collector Current Ic Max: 80 A

Gate-Emitter Leakage Current: 250 nA

Technology: Si

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STGW80H65DF, IGBT, 120A, 650V, STMicroelectronics