STGWT80H65DFB, IGBT, HIGH SPEED, 120A, 600V, 469W, TO3P, STMICROELECTRONICS

Manufacturer: STMicroelectronics

Product Category: IGBT Transistors

RoHS: Details

Technology: Si

Package/Case: TO-3P

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.85 V

Maximum Gate Emitter Voltage: 20 V

Continuous Collector Current at 25 C: 120 A

Pd - Power Dissipation: 469 W

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Series: STGWT80V60DF

Packaging: Tube

Brand: STMicroelectronics

Continuous Collector Current Ic Max: 80 A

Gate-Emitter Leakage Current: 250 nA

Product Type: IGBT Transistors

Utilizare: invertor solar, aparate sudura, sursa PFC, TELECOM

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

STGWT80H65DFB, IGBT, HIGH SPEED, 120A, 600V, 469W, TO3P, STMICROELECTRONICS