IGW50N65F, IGBT, super fast, 600V, 80A, 305W, TO247, INFINEON

Product Category: IGBT Transistors

Manufacturer: Infineon

RoHS: RoHS Compliant Details

Configuration: Single

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.9 V

Maximum Gate Emitter Voltage: 20 V

Continuous Collector Current at 25 C: 80 A

Gate-Emitter Leakage Current: 100 nA

Pd - Power Dissipation: 305 W

Mounting Style: Through Hole

Package/Case: TO-247-3

Maximum Operating Temperature: + 175 C

Packaging: Tube

Brand: Infineon Technologies

Continuous Collector Current Ic Max: 56 A

Minimum Operating Temperature: - 40 C

Series: IGW50N65

Part # Aliases: IGW50N65F5 SP000973426

Utilizare: invertor solar, aparate sudura, sursa PFC, TELECOM

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

PRODUSE ASOCIATE

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IGW50N65F, IGBT, super fast, 600V, 80A, 305W, TO247, INFINEON