The NJW0281G is a NPN Bipolar Power Transistor with superior gain linearity and safe operating area performance. This transistor is ideal for high fidelity audio amplifier output stages and other linear applications.
Complement to NJW0302G
Exceptional Safe Operating Area
Gain Matching within 10% from 50 mA to 3 A
Excellent Gain Linearity
High BVCEO
High Frequency
Reliable Performance at Higher Powers
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
Aplicaţii
Audio, Industrial, Signal Processing
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: ON Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 250 V
Collector- Emitter Voltage VCEO Max: 250 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 15 A
Gain Bandwidth Product fT: 30 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-3P
DC Collector/Base Gain hfe Min: 75
DC Current Gain hFE Max: 75
Maximum Power Dissipation: 150000 mW
Minimum Operating Temperature: - 65 C
Packaging: Tube
Series: NJW0302
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